Memory/ SoC-ABI Test Solution

In the era of rapid AI development, market demand for HBM high-bandwidth memory and computing chips continues to rise. The Acroview V9000-HBM/SoC-T three-temperature burn-in test system precisely meets the core requirements for HBM and SoC burn-in testing: adapting to multi-layer stacking, high-speed I/O, and high-power scenarios, achieving precise temperature control, dynamic stress, high-speed signal integrity, and early failure screening, fully satisfying high-reliability applications in automotive and AI servers. Future evolution will focus on TDBI dynamic burn-in, full process traceability, high-power parallel testing, and automated capacity expansion, with simultaneous compatibility for HBM3E/HBM4/CPU/GPU/FPGA/MCU, continuously improving UPH and yield.

Product Advantages

Ultra-High Parallel Testing Capability

  • Supports up to 1920 DUTs tested in parallel

  • High UPH design, mature and stable, ready for mass production

High-Precision Thermal Management and Pressure Control

  • Real-time monitoring of DUT status, temperature, pressure, and condensation

  • Independent temperature control, supports -40℃~150℃, temperature accuracy ±3℃

  • Independent pressure control ensures stable and reliable contact, pressure accuracy 5%

Innovative Fully Automated Burn-in Testing

  • Fully automated process for loading/unloading, BIB board transport, testing and sorting, no manual intervention required

  • Supports automated HTOL/LTOL and BI testing, reducing human error

  • Key operations traceable, production batch binding, full process traceability

  • Unified engineering and mass production platform, enabling fast production ramp-up and cost reduction

Highly Reliable Self-Developed Test System

  • Test resource boards can be configured as needed, PPMU function enhances channel flexibility

  • Independently developed, supports customized requirements

  • Supports ALPG function, logic vector depth of 128M

Memory/ SoC-ABI Test Solution

Memory/ SoC-ABI Test Solution

Memory/ SoC-ABI Test Solution

Memory/ SoC-ABI Test Solution

Product Specifications

Equipment Performance Indicators

Equipment Dimensions (W*D*H)

4550mm × 3900mm × 2000mm

IC Package Type

BGA

IC Package Dimensions

3mm × 3mm ~ 30mm × 30mm

Loading/Unloading Method

Tray In & Tray Out

Test Sites

1920

Temperature Range

-40~150℃

Temperature Accuracy

±3℃

Communication Interface

TCP/IP, or adaptable to other interfaces

Repeat Positioning Accuracy

±0.02mm

Jam Rate

<1/5000

Up time

>98.5%

MTBA (Mean Time Between Assists)

Non-stop failure: interval ≥ 1 hr; Stop failure: interval ≥ 2 hrs.

Non-stop failure: equipment alarm, does not affect equipment use;

Stop failure: mechanical damage, abnormal standard parts, serious fault requiring shutdown for troubleshooting;

MTBF (Mean Time Between Failures)

≥24 hrs

Noise

≤75 decibels

Note: Measured at 4 points 1 meter from the machine at a height of 1.5 meters; ambient noise less than 70 decibels.

Digital Board (PE) Parameters

Io Channels

256/BIB

Test Frequency

25MHz

Timing Resolution

1.25ns

Rise Time / Fall Time

<4ns @ 2V swing

Timing Accuracy

+/-700ps

IO Drive Voltage

-1.5V ~ 6V

IO Drive Current

+/-20mA -> 120mA

Logic Vector Depth

128M

Failure HRAM

128M

ALPG Function

Supported

Pin Share Function

Supported

Power Supply Board (DPS) Parameters

DP Voltage Range

Quantity

Current Range

Voltage Force

Current Measure

0.5V-1V (Vout1)

1

0~200A

Resolution: 10bit - 1.5625mV

Accuracy: +/-1%

Resolution: 62.5mA

Accuracy: +/-4%

0.5V-2V (Vout2)

1

0~50A

Resolution: 10bit - 1.5625mV

Accuracy: +/-1%

Resolution: 62.5mA

Accuracy: +/-4%

0.5V-3V (Vout3)

8

0~10A

Resolution: 16bit - 1.25mV

Accuracy: +/-1%

Resolution: 16bit - 0.5mA

Accuracy: +/-3%

0.5V-5V (Vout4)

6

0~2A

Resolution: 16bit - 1.25mV

Accuracy: +/-1%

Resolution: 16bit - 0.25mA

Accuracy: +/-3%

PMU (DC) Parameters

Parameter

Range

Resolution

Accuracy

FV

-1.5V ~ 6V

16bit

±(0.2% + 5 mV + 2 mV/10 mA)

FI

±2μA

16bit

±(0.5%*FI + 0.5%* IRange + 20 nA/V)

±20μA

±(0.2%*FI + 0.5%* IRange + 100 nA/V)

±200μA

±(0.2%*FI + 0.3%* IRange + 500 nA/V)

±2mA

±(0.2%*FI + 0.3%* IRange + 1 μA/V)

±50mA

±(0.2%*FI + 0.3%* IRange + 10 μA/V)

MV

-1.5V ~ 6V

18bit

±(0.5% + 2 mV + 1 mV/10mA)

MI

±2μA

18bit

±(0.5%*FI + 0.5%* IRange + 20 nA/V)

±20μA

±(0.2%*FI + 0.5%* IRange + 100 nA/V)

±200μA

±(0.2%*FI + 0.3%* IRange + 500 nA/V)

±2mA

±(0.2%*FI + 0.3%* IRange + 1 μA/V)

±50mA

±(0.2%*FI + 0.3%* IRange + 10 μA/V)

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