HBM High-Speed Memory Burn-In Test Solution

In the era of rapid AI development, market demand for HBM high-bandwidth memory and computing chips continues to rise. The Acroview V9000-HBM/SoC-T three-temperature burn-in test system precisely meets the core requirements for HBM and SoC burn-in testing: adapting to multi-layer stacking, high-speed I/O, and high-power scenarios, achieving precise temperature control, dynamic stress, high-speed signal integrity, and early failure screening, fully satisfying high-reliability applications in automotive and AI servers. Future evolution will focus on TDBI dynamic burn-in, full process traceability, high-power parallel testing, and automated capacity expansion, with simultaneous compatibility for HBM3E/HBM4/CPU/GPU/FPGA/MCU, continuously improving UPH and yield.

Product Advantages

Ultra-High Parallel Testing Capability

  • Supports up to 1920 DUTs tested in parallel

  • High UPH design, mature and stable, ready for mass production

High-Precision Thermal Management and Pressure Control

  • Real-time monitoring of DUT status, temperature, pressure, and condensation

  • Independent temperature control, supports -40°C to 150°C, temperature accuracy ±3°C

  • Independent pressure control ensures stable and reliable contact, pressure accuracy 5%

Innovative Fully Automated Burn-in Testing

  • Fully automated process for loading/unloading, BIB board transport, testing and sorting, no manual intervention required

  • Supports automated HTOL/LTOL and BI testing, reducing human error

  • Key operations traceable, production batch binding, full process traceability

  • Unified engineering and mass production platform, enabling fast production ramp-up and cost reduction

Highly Reliable Self-Developed Test System

  • Test resource boards can be configured as needed, PPMU function enhances channel flexibility

  • Independently developed, supports customized requirements

  • Supports ALPG function, logic vector depth of 128M

HBM High-Speed Memory Burn-In Test Solution

HBM High-Speed Memory Burn-In Test Solution

HBM High-Speed Memory Burn-In Test Solution

HBM High-Speed Memory Burn-In Test Solution

Product Specifications

Equipment Performance Indicators

Equipment Dimensions (W*D*H)

4550mm × 3900mm × 2000mm

IC Package Type

BGA

IC Package Dimensions

3mm × 3mm ~ 30mm × 30mm

Loading/Unloading Method

Tray In & Tray Out

Test Sites

1920

Temperature Range

-40~150°C

Temperature Accuracy

±3°C

Communication Interface

TCP/IP, or adaptable to other interfaces

Repeat Positioning Accuracy

±0.02mm

Jam Rate

<1/5000

Up time

>98.5%

MTBA (Mean Time Between Assists)

Non-stop failure: interval ≥ 1 hr; Stop failure: interval ≥ 2 hrs.

Non-stop failure: equipment alarm, does not affect equipment use;

Stop failure: mechanical damage, abnormal standard parts, serious fault requiring shutdown for troubleshooting;

MTBF (Mean Time Between Failures)

≥24 hrs

Noise

≤75 decibels

Note: Measured at 4 points 1 meter from the machine at a height of 1.5 meters; ambient noise less than 70 decibels.

Digital Board (PE) Parameters

Io Channels

256/BIB

Test Frequency

25MHz

Timing Resolution

1.25ns

Rise Time / Fall Time

<4ns @ 2V swing

Timing Accuracy

+/-700ps

IO Drive Voltage

-1.5V ~ 6V

IO Drive Current

+/-20mA -> 120mA

Logic Vector Depth

128M

Failure HRAM

128M

ALPG Function

Supported

Pin Share Function

Supported

Power Supply Board (DPS) Parameters

1

DP Voltage Range

Quantity

Current Range

Voltage Force

Current Measure

0.5V-1V (Vout1)





0~200A

Resolution: 10bit - 1.5625mV

Accuracy: +/-1%

Resolution: 62.5mA

Accuracy: +/-4%



0.5V-2V (Vout2)

1

0~50A

Resolution: 10bit - 1.5625mV

Accuracy: +/-1%

Resolution: 62.5mA

Accuracy: +/-4%

0.5V-3V (Vout3)

8

0~10A

Resolution: 16bit - 1.25mV

Accuracy: +/-1%

Resolution: 16bit - 0.5mA

Accuracy: +/-3%

0.5V-5V (Vout4)

6

0~2A

Resolution: 16bit - 1.25mV

Accuracy: +/-1%

Resolution: 16bit - 0.25mA

Accuracy: +/-3%

PMU (DC) Parameters

Parameter

Range

Resolution

Accuracy

FV

-1.5V ~ 6V

16bit

±(0.2% + 5 mV + 2 mV/10 mA)

FI

±2μA

16bit

±(0.5%*FI + 0.5%* IRange + 20 nA/V)

±20μA

±(0.2%*FI + 0.5%* IRange + 100 nA/V)

±200μA

±(0.2%*FI + 0.3%* IRange + 500 nA/V)

±2mA

±(0.2%*FI + 0.3%* IRange + 1 μA/V)

±50mA

±(0.2%*FI + 0.3%* IRange + 10 μA/V)

MV

-1.5V ~ 6V

18bit

±(0.5% + 2 mV + 1 mV/10mA)

MI

±2μA

18bit

±(0.5%*FI + 0.5%* IRange + 20 nA/V)

±20μA

±(0.2%*FI + 0.5%* IRange + 100 nA/V)

±200μA

±(0.2%*FI + 0.3%* IRange + 500 nA/V)

±2mA

±(0.2%*FI + 0.3%* IRange + 1 μA/V)

±50mA

±(0.2%*FI + 0.3%* IRange + 10 μA/V)

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