In the era of rapid AI development, market demand for HBM high-bandwidth memory and computing chips continues to rise. The Acroview V9000-HBM/SoC-T three-temperature burn-in test system precisely meets the core requirements for HBM and SoC burn-in testing: adapting to multi-layer stacking, high-speed I/O, and high-power scenarios, achieving precise temperature control, dynamic stress, high-speed signal integrity, and early failure screening, fully satisfying high-reliability applications in automotive and AI servers. Future evolution will focus on TDBI dynamic burn-in, full process traceability, high-power parallel testing, and automated capacity expansion, with simultaneous compatibility for HBM3E/HBM4/CPU/GPU/FPGA/MCU, continuously improving UPH and yield.
Ultra-High Parallel Testing Capability
Supports up to 1920 DUTs tested in parallel
High UPH design, mature and stable, ready for mass production
High-Precision Thermal Management and Pressure Control
Real-time monitoring of DUT status, temperature, pressure, and condensation
Independent temperature control, supports -40°C to 150°C, temperature accuracy ±3°C
Independent pressure control ensures stable and reliable contact, pressure accuracy 5%
Innovative Fully Automated Burn-in Testing
Fully automated process for loading/unloading, BIB board transport, testing and sorting, no manual intervention required
Supports automated HTOL/LTOL and BI testing, reducing human error
Key operations traceable, production batch binding, full process traceability
Unified engineering and mass production platform, enabling fast production ramp-up and cost reduction
Highly Reliable Self-Developed Test System
Test resource boards can be configured as needed, PPMU function enhances channel flexibility
Independently developed, supports customized requirements
Supports ALPG function, logic vector depth of 128M




Equipment Performance Indicators
Equipment Dimensions (W*D*H) | 4550mm × 3900mm × 2000mm |
IC Package Type | BGA |
IC Package Dimensions | 3mm × 3mm ~ 30mm × 30mm |
Loading/Unloading Method | Tray In & Tray Out |
Test Sites | 1920 |
Temperature Range | -40~150°C |
Temperature Accuracy | ±3°C |
Communication Interface | TCP/IP, or adaptable to other interfaces |
Repeat Positioning Accuracy | ±0.02mm |
Jam Rate | <1/5000 |
Up time | >98.5% |
MTBA (Mean Time Between Assists) | Non-stop failure: interval ≥ 1 hr; Stop failure: interval ≥ 2 hrs. Non-stop failure: equipment alarm, does not affect equipment use; Stop failure: mechanical damage, abnormal standard parts, serious fault requiring shutdown for troubleshooting; |
MTBF (Mean Time Between Failures) | ≥24 hrs |
Noise | ≤75 decibels Note: Measured at 4 points 1 meter from the machine at a height of 1.5 meters; ambient noise less than 70 decibels. |
Digital Board (PE) Parameters
Io Channels | 256/BIB |
Test Frequency | 25MHz |
Timing Resolution | 1.25ns |
Rise Time / Fall Time | <4ns @ 2V swing |
Timing Accuracy | +/-700ps |
IO Drive Voltage | -1.5V ~ 6V |
IO Drive Current | +/-20mA -> 120mA |
Logic Vector Depth | 128M |
Failure HRAM | 128M |
ALPG Function | Supported |
Pin Share Function | Supported |
Power Supply Board (DPS) Parameters
1
DP Voltage Range | Quantity | Current Range | Voltage Force | Current Measure |
0.5V-1V (Vout1) | ||||
0~200A | Resolution: 10bit - 1.5625mV Accuracy: +/-1% | Resolution: 62.5mA Accuracy: +/-4% | ||
0.5V-2V (Vout2) | 1 | 0~50A | Resolution: 10bit - 1.5625mV Accuracy: +/-1% | Resolution: 62.5mA Accuracy: +/-4% |
0.5V-3V (Vout3) | 8 | 0~10A | Resolution: 16bit - 1.25mV Accuracy: +/-1% | Resolution: 16bit - 0.5mA Accuracy: +/-3% |
0.5V-5V (Vout4) | 6 | 0~2A | Resolution: 16bit - 1.25mV Accuracy: +/-1% | Resolution: 16bit - 0.25mA Accuracy: +/-3% |
PMU (DC) Parameters
Parameter | Range | Resolution | Accuracy |
FV | -1.5V ~ 6V | 16bit | ±(0.2% + 5 mV + 2 mV/10 mA) |
FI | ±2μA | 16bit | ±(0.5%*FI + 0.5%* IRange + 20 nA/V) |
±20μA | ±(0.2%*FI + 0.5%* IRange + 100 nA/V) | ||
±200μA | ±(0.2%*FI + 0.3%* IRange + 500 nA/V) | ||
±2mA | ±(0.2%*FI + 0.3%* IRange + 1 μA/V) | ||
±50mA | ±(0.2%*FI + 0.3%* IRange + 10 μA/V) | ||
MV | -1.5V ~ 6V | 18bit | ±(0.5% + 2 mV + 1 mV/10mA) |
MI | ±2μA | 18bit | ±(0.5%*FI + 0.5%* IRange + 20 nA/V) |
±20μA | ±(0.2%*FI + 0.5%* IRange + 100 nA/V) | ||
±200μA | ±(0.2%*FI + 0.3%* IRange + 500 nA/V) | ||
±2mA | ±(0.2%*FI + 0.3%* IRange + 1 μA/V) | ||
±50mA | ±(0.2%*FI + 0.3%* IRange + 10 μA/V) |